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MegaMOS TM FET
V DSS
I D25
R DS(on)
N-Channel Enhancement Mode
IXTH / IXTM 67N10
IXTH / IXTM 75N10
IXTT 75N10
100 V
100 V
67 A 25 m ?
75 A 20 m ?
TO-247 AD (IXTH)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
100
100
± 20
± 30
V
V
V
V
TO-204 AE (IXTM)
(TAB)
I D25
T C = 25 ° C
67N10
75N10
67
75
A
A
I DM
P D
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
67N10
75N10
268
300
300
A
A
W
TO-268 (IXTT)
D
G
T J
-55 ... +150
° C
T JM
T stg
150
-55 ... +150
° C
° C
G
S
D (TAB)
M d
Mounting torque
1.13/10 Nm/lb.in.
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-204
TO-247
TO-268
18
6
5
10
g
g
g
° C
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
DC-DC converters
Synchronous rectification
Battery chargers
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
100
2.0
4
± 100
250
1
V
V
nA
μ A
mA
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25 67N10
75N10
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.025
0.020
?
?
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2003 IXYS All rights reserved
DS91533F(9/03)
1
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